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AP6679GP-A - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP6679GP-A
Manufacturer Advanced Power Electronics
File Size 82.46 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP6679GP-A Datasheet
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Full PDF Text Transcription

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AP6679GS/P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 13.5mΩ -65A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD S TO-263(S) The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GP) are available for low-profile applications.
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