Datasheet Details
| Part number | AP6679GR |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 165.21 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6679GR Download (PDF) |
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| Part number | AP6679GR |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 165.21 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP6679GR Download (PDF) |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G D S TO-262(R) The TO-262 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating -30 +25 -75 -51 -300 89 0.71 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 2008012303 Free Datasheet http://www.datasheet4u.com/ AP6679GR Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
AP6679GR RoHS-compliant Product Advanced Power Electronics Corp.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP6679BGM | P-Channel 30V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AP6679GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GI | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GI-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GM-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GP | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GP-A | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |