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AP6923O
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode
A K A A
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
BVDSS RDS(ON)
S G S D
-20V 50mΩ -3.5A
TSSOP-8
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D
A
G S K
Absolute Maximum Ratings
Symbol VDS VKA VGS ID@TA=25℃ ID@TA=70℃ IDM IF IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage (MOSFET and Schottky))
http://www.DataSheet4U.net/
Rating -20 20 ± 12 - 3.5 - 2.