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AP6923O Datasheet P-channel MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP6923O Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode A K A A P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET BVDSS RDS(ON) S G S D -20V 50mΩ -3.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

D A G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25℃ ID@TA=70℃ IDM IF IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage (MOSFET and Schottky)) http://..net/ Rating -20 20 ± 12 - 3.5 - 2.8 - 30 1 25 1 1 -55 to 150 -55 to 125 Units V V V A A A A A W W ℃ ℃ Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range 1 1 3 3 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient (MOSFET) Thermal Resistance Junction-ambient 3 (Schottky) 3 Value Max.

Max.

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