Datasheet4U Logo Datasheet4U.com

AP70SL500AI - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

AP70SL500A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

📥 Download Datasheet

Datasheet preview – AP70SL500AI

Datasheet Details

Part number AP70SL500AI
Manufacturer Advanced Power Electronics
File Size 101.49 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP70SL500AI Datasheet
Additional preview pages of the AP70SL500AI datasheet.

📁 Similar Datasheet

  • AP7000 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7001 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7002 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7003 - Speech Recognition IC (ETC)
  • AP7003 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7004 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7005 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7006 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7007 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7008 - TELECOMMUNICATIONS TRANSFORMERS (apx)
Other Datasheets by Advanced Power Electronics

Full PDF Text Transcription

Click to expand full text
Advanced Power Electronics Corp. AP70SL500AI Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Fast Switching Characteristic D ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G S Description AP70SL500A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. VDS @ Tj,max. RDS(ON) ID3,4 750V 0.5Ω 8.
Published: |