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AP70T03GJB - N-Channel MOSFET

General Description

AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Full PDF Text Transcription for AP70T03GJB (Reference)

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Advanced Power Electronics Corp. AP70T03GJB Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching C...

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SFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all commercial-industrial through-hole applications without leadcutted. BVDSS RDS(ON) ID 30V 9mΩ 60A GDS TO-251S(JB) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) S