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AP72T03GP-HF-3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP72T03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-pliant, halogen-free G S D BV DSS RDS(ON) ID 30V 9.

General Description

D (tab) Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The AP72T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.

G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 65 47 190 70 0.48 -55 to 175 -55 to 175 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units °C/W °C/W Ordering Information AP72T03GP-HF-3TB : in RoHS-pliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electronics Corp.

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