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AP730P-HF-3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP730P-HF-3 N-channel Enhancement-mode Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Performance RoHS-pliant, halogen-free G S D BV DSS RDS(ON) ID 400V 1.0Ω 5.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The AP730P-HF-3 is in the TO-220 package, which is widely used for mercial and industrial applications, and is well-suited for high voltage applications such as switch mode power supplies, DC-AC converters and high-current high-speed switching circuits.

G D TO-220 (P) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 400 ±30 5.5 3.5 23 74 0.59 2 Units V V A A A W W/°C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 1.7 62 Unit °C/W °C/W Ordering Information AP730P-HF-3TB RoHS-pliant halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp.

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