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AP73T03GMT-HF Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP73T03GMT-HF Halogen-Free Product Advanced Power Electronics Corp.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6® package is special for DC-DC converters application and the foot print is patible with SO-8 with backside heat sink and lower profile.

S S S G PMPAK 5x6 ® Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 58 18.3 14.7 160 50 5 4 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200912071 AP73T03GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Min.

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