Datasheet Details
| Part number | AP75N07AGP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 93.26 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP75N07AGP-HF-AdvancedPowerElectronics.pdf |
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Overview: AP75N07AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP75N07AGP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 93.26 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP75N07AGP-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for mercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 4 Rating 75 +30 80 70 320 300 3 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.5 62 Units ℃/W ℃/W 1 201306243 Data & specifications subject to change without notice AP75N07AGP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o o Test Conditions VGS=0V, ID=250uA 2 Min.
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