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AP76T03AGMT-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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Description

AP76T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP76T03AGMT-HF
Manufacturer Advanced Power Electronics
File Size 59.48 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet AP76T03AGMT-HF Datasheet
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Full PDF Text Transcription

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Advanced Power Electronics Corp. AP76T03AGMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink D ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G Description S AP76T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. BVDSS RDS(ON) ID 30V 7.
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