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AP7811M
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
25V 12mΩ 11.8A
ID
SO-8
S S
S
Description
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The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G
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The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current Pulsed Drain Current
1 3
Rating 25 ±12 11.