Download AP85L02H-A Datasheet PDF
Advanced Power Electronics Corp
AP85L02H-A
AP85L02H-A is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description AP88LS02 used advanced design and process to achieve low gate charge ,lower on-resistance and fast switching performance. The TO-252 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85L02J-A) is available for low-profile applications. Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range BVDSS RDS(ON) ID 25V 6mΩ 75A G D S TO-252(H) Rating 25 ±20 75 64 350 96 0.75 -55 to...