Click to expand full text
AP9406MP
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic
S S D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G S
30V 18mΩ 10.3A
ID
Description
Exposed pad SO-8 (Drain contact on the Backside)
D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The exposed pad SO-8 package provides the backside heat sink (Drain) to release thermal and reduce the package temperature and is good for low voltage applications such as high current DC/DC converters.