AP9406MP Datasheet | Advanced Power Electronics Corp

Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic S S D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) 30V 18mΩ 10.3A Description Exposed pad SO-8 (Drain contact on the Backside) The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The exposed pad SO-8 package provides the backside heat sink (Drain) to release thermal and reduce the package temperature and is good for low voltage applications such as high current DC/DC...