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AP9412AGM-HF-3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP9412AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Ultra Low On-Resistance Fast Switching Performance RoHS-pliant, halogen-free D BV DSS G S 30V 6.

General Description

D Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, low on-resistance and cost-effectiveness.

The AP9412AGM-HF-3 is in the SO-8 package, which is widely used for mercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.

D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 16 12.8 50 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.5 0.02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP9412AGM-HF-3TR : in RoHS-pliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2012 Advanced Power Electronics Corp.

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