AP9412GJ Datasheet PDF - Advanced Power Electronics N-CHANNEL ENHANCEMENT MODE POWER MOSFET Specs

AP9412GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9412GJ, a member of the AP9412GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Datasheet Details

Part number	AP9412GJ
Manufacturer	Advanced Power Electronics
File Size	61.17 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP9412GJ Datasheet
Additional preview pages of the AP9412GJ datasheet.

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Full PDF Text Transcription

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AP9412GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 73A S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low □ on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9412GJ) are available for low-profile applications.

Published: Sep 15, 2014 |