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AP9431GH-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D (tab) G D S The AP9431GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.

TO-252 (H) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=70°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 55 ±20 23.5 16.6 70 30 2.4 -55 to 175 -55 to 175 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 5 62.5 Unit °C/W °C/W Ordering Information AP9431GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9431GH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 55V 24mΩ 23.