AP9435GG Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 100 Unit ℃/W Data and specifications subject to change without notice 201021051-1/4 AP9435GG @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. Units...
