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AP9435GG
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Single www.DataSheet4U.com Drive Requirement G S ▼ RoHS Compliant D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 50mΩ - 4.2A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D
S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating - 30 ±20 - 4.2 -3.4 -20 1.25 0.