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AP9435GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9435GJ datasheet PDF. This datasheet also covers the AP9435GH variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The TO-252/TO-251 package is wid ely used for commercial-industrial application.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9435GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9435GJ-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435GJ-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435GG P-CHANNEL MOSFET
AP9435GG-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 20A Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is wid ely used for commercial-industrial application. G D D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ±20 - 20 -13 -60 12.5 0.