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AP9435J - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9435J, a member of the AP9435GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.

The TO-252/TO-251 package is wid ely used for commercial-industrial application.

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Datasheet preview – AP9435J

Datasheet Details

Part number AP9435J
Manufacturer Advanced Power Electronics
File Size 245.68 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9435J Datasheet
Additional preview pages of the AP9435J datasheet.

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Full PDF Text Transcription

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AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 20A Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is wid ely used for commercial-industrial application. G D D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ±20 - 20 -13 -60 12.5 0.
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