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AP9452G
Advanced Power Electronics Corp.
▼ Lower gate charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
20V 50mΩ 4A
G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D
S
SOT-89
D G
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V3 Continuous Drain Current, VGS @ 4.5V3 Pulsed Drain Current
1
Rating 20 ±16 4 2.5 12 1.25 0.