AP9465BGJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
Download the AP9465BGJ datasheet PDF.
This datasheet also covers the AP9465BGH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications.
Note: The manufacturer provides a single datasheet file (AP9465BGH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AP9465BGJ (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AP9465BGJ. For precise diagrams, and layout, please refer to the original PDF.
AP9465BGH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT...
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ve Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 32mΩ 20A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications. The through-hole version (AP9465BGJ) are available for low-profile applications.
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AP9465BGJ Datasheet
