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AP9466GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9466GJ datasheet PDF. This datasheet also covers the AP9466GH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9466GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AP9466GJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP9466GJ. For precise diagrams, and layout, please refer to the original PDF.

AP9466GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEME...

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e Requirement ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 13.5mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9466GJ) are available for low-profile applications.