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AP9477GK
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant
SOT-223 G D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
S
60V 90mΩ 4.1A
ID
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 60 ±20 4.1 3.3 20 2.8 0.