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AP9479GM-HF-3 Datasheet N-Channel MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP9479GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.

D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 ±25 5.6 4.5 30 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.5 0.02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP9479GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9479GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S 60V 45mΩ 5.

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