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AP94T07GP-HF Datasheet N-channel MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: AP94T07GP-HF Halogen-Free Product Advanced Power Electronics Corp.

General Description

The Advanced Advanced Power Power MOSFETs MOSFETs fromfrom APEC APEC provide provide the the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for mercial-industrial power applications and suited for low voltage applications such as DC/DC converters.

G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 75 +20 80 58 300 125 4 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 45 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W 1 201010192 Data and specifications subject to change without notice AP94T07GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=60V, VGS=0V VGS=+20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=1Ω,VGS=10V RD=1Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.

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