Datasheet Details
| Part number | AP94T07GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 92.04 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP94T07GP-HF-AdvancedPowerElectronics.pdf |
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Overview: AP94T07GP-HF Halogen-Free Product Advanced Power Electronics Corp.
| Part number | AP94T07GP-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 92.04 KB |
| Description | N-Channel MOSFET |
| Datasheet | AP94T07GP-HF-AdvancedPowerElectronics.pdf |
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The Advanced Advanced Power Power MOSFETs MOSFETs fromfrom APEC APEC provide provide the the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for mercial-industrial power applications and suited for low voltage applications such as DC/DC converters.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 75 +20 80 58 300 125 4 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 45 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W 1 201010192 Data and specifications subject to change without notice AP94T07GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=60V, VGS=0V VGS=+20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=1Ω,VGS=10V RD=1Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min.
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|---|---|
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