Datasheet Details
| Part number | AP9685GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.09 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9685GM-HF-AdvancedPowerElectronics.pdf |
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Overview: AP9685GM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS pliant & Halogen-Free D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S G 80V 45mΩ 5.
| Part number | AP9685GM-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.09 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP9685GM-HF-AdvancedPowerElectronics.pdf |
|
|
|
Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SO-8 package is widely preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 80 +20 5.3 3.4 50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201211132 Data and specifications subject to change without notice AP9685GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min.
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