Datasheet4U Logo Datasheet4U.com

AP9918GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9918GH

Datasheet Details

Part number AP9918GH
Manufacturer Advanced Power Electronics
File Size 80.16 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9918GH Datasheet
Additional preview pages of the AP9918GH datasheet.

📁 Similar Datasheet

  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)
  • AP9974GP - N-Channel 60-V MOSFET (VBsemi)
  • AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)
  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics
  • AP9918GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9918H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9918J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9912J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9915GK-HF-3 - N-channel Enhancement-mode Power MOSFET
  • AP9915H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9918GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mount package N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 45A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 12 45 20 140 48 0.
Published: |