AP9962M datasheet by Advanced Power Electronics Corp.
| Part number | AP9962M |
|---|---|
| Datasheet | AP9962M_AdvancedPowerElectronics.pdf |
| File Size | 109.03 KB |
| Manufacturer | Advanced Power Electronics Corp |
| Description | POWER MOSFET |
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The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 200407031 AP9962M @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 0.1 11 25.8...
View all Advanced Power Electronics Corp datasheets
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|---|---|
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| AP9962AGH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGP | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962AGP-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9962BGH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
