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AP9972GR Datasheet POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 ±25 60 38 230 89 0.7 30 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ A ℃ ℃ Total Power Dissipation Linear Derating Factor Avalanche Current 3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Max.

Overview

AP9972GR Pb Free Plating Product Advanced Power Electronics Corp.

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