AP9972GR Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 60 ±25 60 38 230 89 0.7 30 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ A ℃ ℃ Total Power Dissipation Linear Derating Factor Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Units ℃/W ℃/W Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A Min. 60 1 - Typ. 0.06 55 32 8 20 11 58 45 80 280 230 1.7 Max. Units 18 22 3 10 25 ±100 51 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) .. VGS=10V, ID=35A VGS=4.5V, ID=25A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=35A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=±25V ID=35A VDS=48V VGS=4.5V VDS=30V ID=35A RG=3.3Ω,VGS=10V RD=0.86Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3170 5070 Source-Drain Diode Symbol VSD...