AP9973M Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. 62.5 Unit ℃/W Data and specifications subject to change without notice 201029031 AP9973M @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 0.06 3.5 8 2 4 8 4...