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AP9976GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9976 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number AP9976GM-HF
Manufacturer Advanced Power Electronics
File Size 51.71 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Advanced Power Electronics Corp. AP9976GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free G2 S2 G1 S1 Description AP9976 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID D1 G2 S1 60V 20.5mΩ 7.6A D2 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
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