Datasheet4U Logo Datasheet4U.com

AP9978GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial through-hole applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AP9971AGM Dual N-Channel MOSFET VBsemi
AP9971GH N-Channel MOSFET VBsemi
AP9971GI-HF N-Channel 60V MOSFET VBsemi
AP9972GS N-Channel 60V MOSFET VBsemi
AP9974 N-Channel MOSFET Kexin

Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9978GP-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9978AGP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9970AGP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9970GK-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9970GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP9978GP RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 10mΩ 75A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 75 49 270 113.