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AP9979GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9979GJ, a member of the AP9979GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Datasheet Details

Part number AP9979GJ
Manufacturer Advanced Power Electronics
File Size 70.53 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9979GJ Datasheet
Additional preview pages of the AP9979GJ datasheet.

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Full PDF Text Transcription

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AP9979GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 48mΩ 20A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9979GJ) are available for low-profile applications.
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