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AP9980M - POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9980M
Manufacturer Advanced Power Electronics
File Size 108.18 KB
Description POWER MOSFET
Datasheet download datasheet AP9980M Datasheet
Additional preview pages of the AP9980M datasheet.

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Full PDF Text Transcription

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AP9980M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 52mΩ 4.6A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 80 ±20 4.6 2.9 30 2 0.
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