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AP9990GH-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The AP9990GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.

G D S D (tab) TO-252 (H) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at Tc=25°C ID at Tc=100°C IDM PD at Tc=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Silicon limited) Continuous Drain Current (Package limited) Continuous Drain Current Pulsed Drain Current 1 Rating 60 ±20 100 75 70 300 125 2.4 -55 to 175 -55 to 175 Units V V A A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.2 62.5 110 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP9990GH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP9990GH-HF-3 N-channel Enhancement-mode Power MOSFET Low On-resistance Simple Drive Requirement Fast Switching Characteristics RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 60V.