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AP9992AGI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP9992A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

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Datasheet Details

Part number AP9992AGI-HF
Manufacturer Advanced Power Electronics
File Size 116.99 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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AP9992AGI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 3.5mΩ 80A Description AP9992A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
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