Datasheet Details
| Part number | AP9T16AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.73 KB |
| Description | N-channel Enhancement-mode Power MOSFET |
| Datasheet | AP9T16AGH-HF-AdvancedPowerElectronics.pdf |
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Overview: AP9T16AGH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS pliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 20mΩ 19.
| Part number | AP9T16AGH-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 56.73 KB |
| Description | N-channel Enhancement-mode Power MOSFET |
| Datasheet | AP9T16AGH-HF-AdvancedPowerElectronics.pdf |
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-252 package is widely preferred for mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 +12 19.5 12.3 80 12.5 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 10 62.5 Units ℃/W ℃/W 1 201110071 Data and specifications subject to change without notice AP9T16AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=12A VGS=2.5V, ID=10A Min.
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