0910-150M Datasheet PDF | Advanced Power Technology

Advanced Power Technology 0910-150M

The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability.

Part No.	0910-150M
Datasheet	0910-150M Download
Manufacturer	Advanced Power Technology
Description	RF Transistor
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GENERAL DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC 400 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.5 Volts 12 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC CASE OUTLINE 55KT, STYLE 1

ELECTRICAL CHARACTERISTICS

@ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pg ηc Pd Rl VSWR1 VSWRs Power Out Power Gain Collector Efficiency Pulse Droop Input Return loss Load Mismatch Tolerance Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890 – 1000 MHz Vcc = 48 Volts Pin = 23 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Thermal Resistance Ic = 10 mA Vce = 50 Volts Vebo = 2.5 Volts Rated Pulse Condition MIN TYP MAX UNITS 150 210 Watts 8.1 8.5 dB 40 45 % 0.5 dB -9 dB 3:1 2:1 65 Volts 10 mA 5.0 mA 0.48 oC/W Issue Mar 2005 ADVANCED POWER TECHNOLOGY INC.