Datasheet4U Logo Datasheet4U.com

0910-150M - RF Transistor

General Description

The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz.

This hermetically solder-sealed transistor is specifically designed for P-Band radar applications.

📥 Download Datasheet

Datasheet Details

Part number 0910-150M
Manufacturer Advanced Power Technology
File Size 108.90 KB
Description RF Transistor
Datasheet download datasheet 0910-150M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
0910 – 150M 0910-150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 400 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.