0910-300M Datasheet PDF | Advanced Power Technology

Advanced Power Technology 0910-300M

The 0910-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5% duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

Part No.	0910-300M
Datasheet	0910-300M Download
Manufacturer	Advanced Power Technology
Description	RF Transistor
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GENERAL DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC 600 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.5 Volts 20 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC CASE OUTLINE 55KT, STYLE 1

ELECTRICAL CHARACTERISTICS

@ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pg ηc Rl Droop VSWR1 VSWRs Power Out Power Gain Collector Efficiency Input Return loss Load Mismatch Tolerance Droop Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 10%. Freq = 890 – 1000 MHz Vcc = 50 Volts Pin = 33 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 80 mA Vce = 50 Volts Rated Pulse Condition MIN TYP MAX UNITS 300 425 Watts 9.6 dB 40 45 % -9 dB 0.5 dB 3:1 2:1 65 Volts 15 mA 0.29 oC/W 0910-300M Issue Nov 2005 ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE.