Advanced Power Technology 0910-60M
The 0910-60M is an internally matched, COMMON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability.| Part No. | 0910-60M |
|---|---|
| Datasheet | 0910-60M Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC 180 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.5 Volts 8 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200oC + 200oC CASE OUTLINE 55AW-1ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pg ηc Pd Rl VSWR1 VSWRs Power Out Power Gain Collector Efficiency Pulse Droop Input Return loss Load Mismatch Tolerance Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890 – 1000 MHz Vcc = 40 Volts Pin = 9.5 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Thermal Resistance Ic = 40 mA Vce = 40 Volts Vebo = 3.0 Volts Rated Pulse Condition MIN TYP MAX UNITS 60 84 Watts 8.0 8.5 dB 40 45 % 0.5 dB -9 dB 3:1 2:1 65 Volts 10 mA 8 mA 1.0 oC/W Issue December 2005 ADVANCED POWER TECHNOLOGY INC.
