2729-125 Datasheet PDF | Advanced Power Technology

Advanced Power Technology 2729-125

The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications.

Part No.	2729-125
Datasheet	2729-125 Download
Manufacturer	Advanced Power Technology
Description	Radar
Buy	Stock & Price

GENERAL DESCRIPTION

It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common Base

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation 350 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 15 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C

ELECTRICAL CHARACTERISTICS

@ 25°C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 36 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 125W Ie = 30 mA Ic = 120 mA Vce = 5V, Ic = 600 mA MIN 125 15.7 9.0 45 9.5 55 2:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1 NOTE: Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance 1. At r...