Advanced Power Technology 2729-170
The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetically solder-sealed transistor is specifically designed for S-band radar applications.| Part No. | 2729-170 |
|---|---|
| Datasheet | 2729-170 Download |
| Manufacturer |  Advanced Power Technology |
| Description | Radar |
| Buy | Stock & Price |
GENERAL DESCRIPTION
It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KS-1 Common BaseABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25 °C1 Maximum Voltage and Current Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) Collector Current (Ic) Maximum Temperatures 570 W 65 V 3.0 V 17 A Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °CELECTRICAL CHARACTERISTICS
@ 25° C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Load Mismatch Tolerance1 TEST CONDITIONS F=2700-2900 MHz Vcc = 38 Volts Pulse Width = 100 µs Duty Factor = 10% F = 2900 MHz, Po = 170 W MIN 170 25.7 8.2 52 8.6 60 2:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25° C BVebo Iebo BVces Ices h FE θjc 1 Emitter to Base Breakdown Emitter to Base Leakage Collector to Emitter Breakdown Collector to Emitter Leakage DC – Current Gain Thermal Resistance 1.
