2N6304 Datasheet PDF - Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Specs

2N6304 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Datasheet Summary

Description

The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers.

Features

Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

Datasheet Details

Part number	2N6304
Manufacturer	Advanced Power Technology
File Size	126.67 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	2N6304 Datasheet
Additional preview pages of the 2N6304 datasheet.

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.

Published: Jun 4, 2007 |