40GP60J Datasheet | Advanced Power Technology

.. APT40GP60J 600V SOT-227 E POWER MOS 7® IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff - 100 k Hz operation @ 400V, 25A - 200 k Hz operation @ 400V, 16A - SSOA rated ISOTOP® C "UL Recognized" MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT40GP60J UNIT VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 600 ±20 ±30 86 40 160 160A @ 600V 284 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVCES VGE(TH) VCE(ON) I CES I GES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MIN TYP MAX UNIT Volts 2.2...