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APT40GP60J
600V
G E
C
SOT-227 E
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 25A • 200 kHz operation @ 400V, 16A • SSOA rated
ISOTOP®
C "UL Recognized"
G
E
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.