Datasheet Details
| Part number | AP4936M |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 115.86 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4936M_AdvancedPowerTechnology.pdf |
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Overview: .. AP4936M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 25V 37mΩ 5.
| Part number | AP4936M |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 115.86 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4936M_AdvancedPowerTechnology.pdf |
|
|
|
D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 5.8 4.6 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 20020305 ..
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