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APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Identical Specifications: TO-247 or Surface Mount D3PAK Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
SLC
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT1001RBLC Datasheet
