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APT1001RBLC Datasheet PDF

Advanced Power Technology APT1001RBLC

MOSFET

Part No. APT1001RBLC
Datasheet APT1001RBLC Download
Manufacturer
Advanced Power Technology
Description MOSFET
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APT1001RBLC datasheet page 1 preview

MAXIMUM RATINGS

Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SLC D G S All Ratings: TC = 25°C unless otherwise specified. APT1001R UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F D A IN 1000 11 44 ±30 ±40 280 2.24 300 26 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 1210 STATIC

ELECTRICAL CHARACTERISTICS

Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 11 1.00 25 250 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS =...
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