Advanced Power Technology APT10025PVR
MOSFET
| Part No. | APT10025PVR |
|---|---|
| Datasheet | APT10025PVR Download |
| Manufacturer |  Advanced Power Technology |
| Description | MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage All Ratings: TC = 25°C unless otherwise specified. APT10025PVR UNIT Volts Amps 1000 1 RY A IN IM MIN Continuous Drain Current @ TC = 25°C Pulsed Drain Current 33 132 ±30 ±40 625 5.0 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Volts Watts W/°C °C Amps mJ Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 -55 to 150 300 33 50 3600 (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 PR EL 4 1000 33 0.250 100 500 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (V...