APT1002R4BN datasheet by Advanced Power Technology.
| Part number | APT1002R4BN |
|---|---|
| Datasheet | APT1002R4BN_AdvancedPowerTechnology.pdf |
| File Size | 50.46 KB |
| Manufacturer | Advanced Power Technology |
| Description | MOSFET |
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D TO-247 G S APT1002RBN ® 1000V 7.0A 2.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40Ω All Ratings: TC = 25°C unless otherwise specified. 0.063" from Case for 10 Sec.
View all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| APT1002R4BN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT1002R4AN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT1002R4CN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT1002RAN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT1002RBN | MOSFET |
| APT1002RBN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT1002RCN | MOSFET |
| APT1002RCN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT10021DFN | (APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET |
| APT10021JFLL | MOSFET |
