APT10030L2VR
1000V 33A 0.300W
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-264 Max
- TO-264 MAX Package
- Faster Switching
- Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
- 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10030L2VR UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T O I E T C MA...
