APT10M09LVR
APT10M09B2VR APT10M09LVR
100V 100A 0.009W
B2VR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
- Identical Specifications: T-MAX™ or TO-264 Package
- Faster Switching
- Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
- 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10M09 UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1 5
Repetitive Avalanche...
